What the industry assumes
The conventional view is that achieving sub-2nm equivalent performance requires extreme ultraviolet (EUV) lithography steppers costing hundreds of millions of dollars, neon gas supply chains, and the kind of infrastructure only the largest foundries in the world can sustain.
SFN's analysis challenges this assumption directly.
What SFN discovered
Through a combination of four factors — 30x compression, the high clocking speeds available from our semiconductor platform and our device technology devices, the elimination of space-consuming metal overlays, and the realistic capacity to stack wafers — SFN confirms that fabrication using older, lower-cost technology can achieve sub-2nm equivalent results.
No EUV steppers. No neon gas. No nine-figure capital expenditure.
Why this matters
This realisation is a game changer for the economics of semiconductor fabrication. It means that a properly designed fast fab — accessible in cost, simple to operate, and based on same-day manufacturing process technology — can produce output that competes at the leading edge on a performance basis, without requiring the infrastructure of a TSMC or Samsung.
It is the technical foundation on which the distributed factory network distributed fabrication model is built.